Photoquenching phenomenon enhanced by proton irradiation in semi-insulating GaAs
- 15 December 1990
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (12) , 6517-6519
- https://doi.org/10.1063/1.346855
Abstract
In undoped semi‐insulating GaAs, we have found that the quenching phenomena of photoconductance and infrared absorption are enhanced by proton irradiation above 1013 /cm2, accompanied by an increase in near‐band‐edge infrared absorption. These phenomena disappear with the annihilation of the proton‐induced near‐band absorption by annealing at 350 °C. It is suggested that the enhanced photoquenching phenomena arise from the increase in the quenchable component due to the transition from the ionized midgap electron trap (EL2+) to the neutral EL20.This publication has 8 references indexed in Scilit:
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