III-V Heterostructures For Laser Emission In The 2.55 µm Wavelength Region

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Abstract
III-V double heterostructure laser diodes emitting at room temperature near 2.55 μm can be prepared using InAsSbP, GaInAsSb or InAlAsSb active zones and GaAlAsSb confinement layers. The limits of the solid phase miscibility gap of these quaternary solid solutions were determined at 530°C. A phenomenological model giving the threshold current density of double heterostructure injection lasers is presented, and applied to the 2.55 μm emitting InAsSbP/ GaAlAsSb and GaInAsSb/GaAlAsSb DH lasers. It is shown that threshold currents are mainly controlled by Auger recombination currents. Thq low value of the overall Auger recombination coefficient for GaInAsSb alloy (C = 1.0 x 10 -28 cm6/s at 2.2 μm) gives threshold current densities varying from 4.5 kA/cm2 to 3 kA/cm2 at room temperature for Ga 0.73 In 0.27 As 0.24 Sb 0.76/Ga 1-x Al x As y Sb 1-y /GaSb 2.55 μm DH lasers when x is varied from 0.4 to 0.7.

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