Integration feasibility of porous SiLK* semiconductor dielectric
- 1 January 2001
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 253-254
- https://doi.org/10.1109/iitc.2001.930076
Abstract
The feasibility of integrating a SiLK* Semiconductor Dielectric film (*trademark of The Dow Chemical Company) that contains closed pores was studied using a single damascene test vehicle. The study focussed on tool qualification, process set-up and single damascene feasibility to demonstrate technology extendibility. The results indicate that only minor changes have to be made to the process conditions when transitioning from a dense to a porous SiLK* film.Keywords
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