Effect of temperature on the built-in electric field in GaAsGaAℓAs:Si heterostructures

This publication has 15 references indexed in Scilit:

• Electronic subbands at GaAsAlGaAs heterojunctions in parallel magnetic fields
  Superlattices and Microstructures, 1989
• Photoreflectance of selectively doped n-AiGaAs/GaAs heterostructures
  Superlattices and Microstructures, 1989
• Optical-absorption profile of a single modulation-doped ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As/GaAs heterojunction
  Physical Review B, 1988
• Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system
  Physical Review B, 1988
• Behavior of the electron-hole gas in quantum wells in GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As heterostructures under in-plane magnetic fields
  Physical Review B, 1987
• Chapter 4 Ultra-High-Speed HEMT Integrated Circuits
  Published by Elsevier ,1987
• Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition
  Journal of Applied Physics, 1986
• Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions
  Applied Physics Letters, 1985
• Third-derivative modulation spectroscopy with low-field electroreflectance
  Surface Science, 1973
• Schottky-Barrier Electroreflectance: Application to GaAs
  Physical Review B, 1973