Valence band ofγ-cerium studied by ultraviolet and x-ray photoemission spectroscopy

Abstract
At room temperature and low pressure, pure cerium is known to be in the γ phase with electron configuration 4f1(5d6s)3. When it is compressed to about 7 kbar, a γα phase transition occurs. To understand this phase transition, the energy position of the f level in γ-cerium is of utmost importance. However, it has not been possible to determine an experimental value of the f-level binding energy using photoemission. In spectra excited by monochromatized Al Kα radiation, the overlapping 4f and 5d6s emissions are not resolved, and it has not been found possible to draw firm conclusions as to the relative order of the f level and the sd band from the structure observed. The present paper concerns ultraviolet-photoemission (UPS) (He i and He ii) and XPS (Mg Kα) measurements on clean Ce films (γ-phase). Even though the 4f-level and 5d6s-band emissions are not resolved, the 4f-level energy position can be estimated from comparison of XPS and UPS valence-band spectra. In the spectra from Ce films exposed to oxygen at room temperature the emission from the 5d6s band is vanishing, thus allowing for an identification of the 4f-level emission. The observed binding energy of the 4f level in γ-Ce is 1.9±0.2 eV relative to the Fermi level. To account for the γα phase transition using either the promotion model and its various extensions or the sdf hybridization model, it is required that the 4f level is situated just below the Fermi energy in γ-Ce. Thus, the present results disfayor these models. However, in the model describing the γα transition as a Mott transition within the 4f shell, such close proximity of the 4f level to the Fermi level is not required. Our results therefore indicate that the γα transition is due to a Mott transition of the 4f electron and a subsequent hybridization with the sd band.

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