Thin-film Bi2WO6

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Abstract
Thin films of Bi2WO6 were prepared by rf sputtering from a stoichiometric power target onto glass substrates. As deposited the films were noncrystalline, but after a low‐temperature heat treatment (200 °C) the films became highly crystalline and were single phase. Data are given for the fabrication procedure and material characteristics. Profilometry measurements indicate that the films were smooth (±200 Å) and suitable for photolithography. Bismuth tungstate is a highly acentric polar material which may be used in piezoelectric and pyroelectric devices. The recrystallized films were optically transparent and interferometry measurements are reported for the determination of refractive index.