Observation of Polaritons in GaAs: A New Interpretation of the Free-Exciton Reflectance and Luminescence
- 13 December 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 27 (24) , 1644-1647
- https://doi.org/10.1103/physrevlett.27.1644
Abstract
The reflectance and luminescence of high-purity epitaxial layers of GaAs have been studied at low temperatures. Strong polariton and spatial dispersion effects are seen for the free exciton. The longitudinal-exciton energy is found to be 1.5151±0.0001 eV (at 2 K) and the transverse-exciton energy is quite near 1.5149 eV. Two luminescence structures at 1.5154 and 1.5148 eV are identified with radiative decay from the upper and lower polariton branches, respectively.
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