Photocurrents and photoconductive yield in MOS structures during x irradiation

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Abstract
Photocurrents and photoconductive yield have been studied in the SiO2 layer of MOS structures during x irradiation. Electrode effects were also studied. The study shows that electron injection into the oxide is not important at low doses and dose rates, but electron injection from electrodes becomes significant when sufficient space charge accumulates in the oxide to reduce the barrier at the Si‐SiO2 interface. The data reported here are consistent with a model where the holes are mobile in SiO2 but are preferentially trapped at the Si‐SiO2 interface. Photoconductive yield measurements exhibit a field dependence which is inconsistent with a model based on the Onsager theory of geminate recombination. Charge generation due to the dissociation of excitons is suggested as a possible mechanism to account for the observed field dependence of the yield.