Results of In-Situ Annealing of Ion-Implanted Silicon in a High Voltage Electron Microscope
- 16 March 1989
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 112 (1) , 419-424
- https://doi.org/10.1002/pssa.2211120157
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Radiation-induced rod-like defects in silicon and germaniumPhysica Status Solidi (a), 1984
- The Nature And Origin Of {113} Faults In Irradiated Silicon And GermaniumJournal of Microscopy, 1980
- Dislocation reactions in arsenic-implanted and annealed siliconPhysica Status Solidi (a), 1976