Plasma separation of InGaAsP/InP light-emitting diodes
- 15 August 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (4) , 411-412
- https://doi.org/10.1063/1.91925
Abstract
The application of plasma etching to the separation of InP/InGaAsP light‐emitting diodes (LED’s) is reported. Device wafers (75 μm thick) were separated by fast (0.6 μm/min) anisotropic (2:1) etching in a CCl4/O2 plasma at 300 °C. The LED’s showed significant improvements in their reverse leakage currents over similar devices separated by conventional mechanical means. We find the separation‐induced mechanical damage to be significant for conventional techniques causing both performance and yield loss. In contrast, the etched surfaces were free of mechanical damage resulting in a 100% yield of separated devices.Keywords
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