Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs-GaAs quantum well
- 29 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (18) , 1858-1860
- https://doi.org/10.1063/1.104120
Abstract
Data are presented demonstrating a strong influence of a closely spaced AlAs/GaAs distributed Bragg reflector on the spontaneous emission characteristics of an InGaAs-GaAs quantum well. The mirror to quantum well spacings on different crystal samples correspond to optical path lengths of either 1/4, 1/2, or 3/4 of the emission wavelength. The samples are characterized using photoluminescence, electroluminescence, and reflectivity measurements. Spontaneous emission is found to be greatly enhanced for a 1/2 wavelength spacing, while 1/4 and 3/4 spacings suppress the spontaneous emission by a factor of ≳1000.Keywords
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