Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals
- 1 September 2002
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 20 (5) , 2075-2079
- https://doi.org/10.1116/1.1508804
Abstract
A study was conducted on metal-oxide-semiconductor (MOS) capacitor and transistor (MOSFET) structures containing a plurality of self-assembled silicon quantum dots incorporated in SiO2. The array of Si islands with an average diameter of a few nanometers was realized, by depositing a subnanometer silicon layer on top of very thin SiO2 film with chemical vapor deposition (CVD). As such, the memory effect were demonstrated by the flat-band shift in the capacitors, or the threshold voltage shift in the transistors, after write and erase operations achieved by electron tunneling through the tunnel oxideKeywords
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