High-detectivity InAs 0.85 Sb 0.15 /InAs infra-red (1.8-4.8 μm) detectors
- 13 February 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (4) , 215-216
- https://doi.org/10.1049/el:19860150
Abstract
We report the operation of broadband InAs0.85Sb0.15pn-junction photodetectors grown on InAs by liquid phase epitaxy. Despite the relatively large mismatch (≃1%) between the layers and the substrate the devices exhibit excellent zero bias detectivities (D*(70 K) = (1.5 × 1011 cm(Hz)1/2/W; D* (200 K) = 2 × 1010 cm(Hz)1/2/W at λ = 3.5 μm) and peak external quantum efficiencies of 40%.Keywords
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