Absorption studies of beryllium-doped silicon

1 July 1986

journal article
Published by IOP Publishing in Semiconductor Science and Technology

Vol. 1 (1) , 45-48
https://doi.org/10.1088/0268-1242/1/1/005

Abstract

The P_3/2 line spectra of three Be-related acceptor centres have been studied. The binding energies of these centres (Be I, Be III and Be IV) have been determined to be about 192200 and 93 meV, respectively. Although the ground state is much deeper than predicted by effective mass theory, the binding energies of the excited states are well described by it. In addition, excitations from the P_3/2 ground state to resonant P_1/2 states have been studied for Be I and Be III and Fano resonance structures have been observed for Be I. As in the case of group-III acceptors, the phonon involved is O^Gamma.

Keywords

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