Temperature dependence of the lasing characteristics of the 1.3 µm InGaAsP-InP and GaAs-Al0.36Ga0.64As DH lasers
- 1 May 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 18 (5) , 871-878
- https://doi.org/10.1109/jqe.1982.1071621
Abstract
No abstract availableKeywords
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