Formation of buried oxide in silicon using separation by plasma implantation of oxygen
- 16 October 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (16) , 2361-2363
- https://doi.org/10.1063/1.114345
Abstract
Plasma immersion ion implantation (PIII) is used to fabricate buried oxide layers in silicon. This ‘‘separation by plasma implantation of oxygen’’ (SPIMOX) technique can achieve a nominal oxygen atom dose of 2×1017 cm−2 in implantation time of about 3 min. SPIMOX is thus presented as a practical high‐throughput process for manufacturing silicon‐on‐insulator. In the SPIMOX samples prepared, three distinct modes of buried oxide microstructure formation are identified and related to the as‐implanted oxygen profiles. A first‐order model based on oxygen transport and oxide precipitation explains the formation mechanisms of these three types of SPIMOX layers.Keywords
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