Erratum: A kinetic study of the plasma-etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmas [J. Appl. Phys. 53, 2923 (1982)]
- 1 September 1982
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (9) , 6491
- https://doi.org/10.1063/1.331663
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