Recombination lifetime in oxygen-precipitated silicon

1 March 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (3) , 172-174
https://doi.org/10.1109/EDL.1986.26334

Abstract

The recombination lifetime degrades when interstitial oxygen precipitates in Czochralski-grown silicon. We have observed a more severe degradation in p-type than in n-type material. Based on recombination lifetime, deep-level transient spectroscopy, Fourier-transform infra-red transmission, and transmission electron microscopy measurements, we attribute the degradation mainly to interface states at the precipitate-silicon interface acting as recombination centers. Positive charge in the oxygen precipitates (OP's), causing an electron-attractive space-charge region (scr) around the precipitate in p-Si and a hole-repulsive accumulation layer in n-Si, is proposed to explain the lifetime differences between n-type and p-type silicon.

Keywords

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