Simulation studies in both the frequency and time domains of InGaAsP-InP avalanche photodetectors

1 May 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 27 (5) , 1000-1003
https://doi.org/10.1109/T-ED.1980.19974

Abstract

The purpose of this brief is to analyze the relation between the physical structure of the quaternary InGaAsP avalanche photodetector and the speed of temporal response. The small-signal time-domain differential equations dealing with the current multiplication in a p-n junction structure operating in the avalanche mode are obtained. The structure is a mesa diode made of an n-type quaternary material In1-xGaxAsyP1-ygrown on a heavily doped InP substrate. For the first time, both magnitude and phase of the frequency response are computed in a frequency band extending up to 256 GHz, from which the time-domain impulse responses are obtained. Simulation studies are performed using light pulses with an FDHM of 48.8 ps and a base duration of 97.7 ps. The FDHM of the detected waveform is less than 70 ps, and the leading edge duration is less than 100 ps.

Keywords

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