Growth of n-type heteroepitaxial films of gray tin on (001) CdTe by molecular beam epitaxy
- 13 March 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (11) , 1010-1012
- https://doi.org/10.1063/1.100782
Abstract
We report the molecular beam epitaxy growth of α-Sn films on argon sputter cleaned (001) CdTe substrates on which a buffer layer of CdTe has been deposited. Films thinner than 400 Å are p-type with carrier densities as high as 2×1019 cm−3 ;thicker films are n-type with carrier densities of (4–10)×1017 . The best film had a mobility of 1.3×104 cm2 /V s at 77 K.Keywords
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