Controlled Sectioning Technique for Small Gallium Arsenide Samples

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Abstract
A technique has been developed for sectioning small gallium arsenide samples utilizing anodic oxidation and subsequent removal of the oxide layers. It differs from those previously reported in that only one surface of the wafer is exposed during anodization and total immersion in the electrolyte is not required. The use of an ammonium pentaborate solution as the electrolyte and a relatively simple anodization apparatus has yielded oxide layers of uniform thickness on the surfaces of gallium arsenide wafers. After removing the oxide layers, the surfaces of the wafers were found to be relatively free of pitting and macroscopic defects.

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