New submicron HBT IC technology demonstrates ultra-fast, low-power integrated circuits
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (9) , 1862-1868
- https://doi.org/10.1109/16.711348
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Fully functional high speed 4-bit A/D converters using InAlAs/InGaAs HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 3-bit, 8 GSPS flash ADCPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Novel self-aligned sub-micron emitter InP/InGaAs HBT's using T-shaped emitter electrodePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Reliability of InP-based HBT IC technology for high-speed, low-power applicationsIEEE Transactions on Microwave Theory and Techniques, 1995
- Ultrahigh f/sub T/ and f/sub max/ new self-alignment InP/InGaAs HBT's with a highly Be-doped base layer grown by ALE/MOCVDIEEE Electron Device Letters, 1995
- Importance of collector doping in the design of AlInAs/GaInAs/InP double heterojunction bipolar transistorsApplied Physics Letters, 1994
- A monolithic 2.3-Gb/s 100-mW clock and data recovery circuit in silicon bipolar technologyIEEE Journal of Solid-State Circuits, 1993
- 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technologyIEEE Electron Device Letters, 1992
- A new self-alignment technology using bridged base electrode for small-scaled AlGaAs/GaAs HBT'sIEEE Transactions on Electron Devices, 1992
- Submicrometer self-aligned AlGaAs/GaAs heterojunction bipolar transistor process suitable for digital applicationsIEEE Transactions on Electron Devices, 1992