Effects of annealing on profiles of aluminum implanted in silicon carbide
- 1 March 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (3) , 994-997
- https://doi.org/10.1063/1.321720
Abstract
The effects of isothermal annealing on the profiles of heavy (4×1016 Al+/cm2 at 60 keV) implantations of Al in SiC were investigated by means of the 27Al(p,γ)28Si nuclear resonance technique. Annealing at 1400 °C for 15 min resulted in the apparent outdiffusion of about 30% of the implanted Al, an accumulation of Al at the surface, and a residual peak at the depth of the as−implanted profile. Subsequent annealing showed continued apparent outdiffusion with the release of Al from trapping sites as the rate−limiting process.This publication has 11 references indexed in Scilit:
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