Optical and structural properties of GaN films grown on c-plane Al 2 O 3 by electron cyclotron resonance molecular beam epitaxy
- 1 April 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 173 (3-4) , 260-265
- https://doi.org/10.1016/s0022-0248(96)00900-1
Abstract
No abstract availableKeywords
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