Characterization of electrically active deep level defects in 4H and 6H SiC

This publication has 6 references indexed in Scilit:

• Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC
  Applied Physics Letters, 1996
• Characterization of Deep Level Defects in 4h and 6H SIC Via DLTS, SIMS And MEV E-Beam Irradiation
  MRS Proceedings, 1996
• Nitrogen donors and deep levels in high-quality 4H–SiC epilayers grown by chemical vapor deposition
  Applied Physics Letters, 1995
• Electrical and optical characterization of SiC
  Physica B: Condensed Matter, 1993
• Overlapping electron traps in n-type silicon studied by capacitance transient spectroscopy
  Journal of Applied Physics, 1989
• The diffusion coefficient of interstitial carbon in silicon
  Semiconductor Science and Technology, 1987