Planar Doped Barrier Diodes Offering Improved Microwave Burnout Performance over Si and GaAs Schottky Diodes

Publisher Website

1 October 1989

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/euma.1989.333972

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Planar doped barrier mixer and detector diodes as alternatives to Schottky diodes for both microwave and millimetre wave applications
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
Planar-doped barriers in GaAs by molecular beam epitaxy
Electronics Letters, 1980