RADIATIVE LIFETIMES IN n-TYPE GALLIUM ARSENIDE
- 15 March 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (6) , 183-184
- https://doi.org/10.1063/1.1652766
Abstract
Radiative lifetimes and time‐resolved spectra have been obtained for high‐purity n‐type gallium arsenide at low temperatures. The ∼ 1.51‐eV bands, generally associated with the annihilation of free and bound excitons, decay very rapidly, τ < 15 nsec. The 1.49‐eV band, variously described as donor‐acceptor recombination or as a free‐to‐bound recombination, has a longer nonexponential decay. For this band, the time‐resolved spectra show a steady shift to lower energy as the delay after the pulse is lengthened. The conclusion drawn is, that the 1.49‐eV band arises from a D‐A recombination process.Keywords
This publication has 6 references indexed in Scilit:
- The Excitation Intensity Effect in the Band-Edge Emission of GaAs and CdSeJournal of Applied Physics, 1968
- Temperature Dependence of Photoluminescence in Cadmium-Doped Epitaxial GaAsJournal of Applied Physics, 1967
- Frequency Shift with Temperature as Evidence for Donor-Acceptor Pair Recombination in Relatively Pure-Type GaAsPhysical Review B, 1967
- Kinetics of Radiative Recombination at Randomly Distributed Donors and AcceptorsPhysical Review B, 1965
- IDENTIFICATION OF LASER TRANSITIONS IN ELECTRON-BEAM-PUMPED GaAsApplied Physics Letters, 1965
- Etude optique de semiconducteurs III–V propres a la realisation de lasersJournal of Physics and Chemistry of Solids, 1964