Electron-beam fabrication of chromium master masks

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Abstract
Conventional photolithographic methods of mask manufacture in the semiconductor industry have limitations which can be overcome using electron lithography. This paper describes application of the electron-beam exposure system (EBES) to the fabrication of chromium master masks using the negative electron resist poly(glycidyl methacrylate-co-ethyl acrylate). Lithographic characterization methods developed specifically for this application include the variation of feature size and develped resist thickness with exposure and have led to the choice of correct operating conditions for EBES. Writing time for a typical 2.5-in. (6.35-cm) mask is 30–60 min, and processing time is about 70 min (excluding inspection and handling). Linewidth control is better than ±0.5 μm and chip yields typically exceed 90% per mask level for LSI circuits. Masks with chip sizes up to 20×16 mm have been processed. One-micrometer feature sizes are obtained routinely.

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