Recombination via two-dimensional excitons in GaAs-(AlGa)As heterojunctions

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1 July 1987

journal article
Published by IOP Publishing in Semiconductor Science and Technology

Vol. 2 (7) , 437-441
https://doi.org/10.1088/0268-1242/2/7/007

Abstract

No abstract available

Keywords

This publication has 6 references indexed in Scilit:

Photoluminescence spectra of modulation-doped GaAs/AlGaAs heterointerfaces
Superlattices and Microstructures, 1986
Subpicosecond excitonic electroabsorption in room-temperature quantum wells
Applied Physics Letters, 1986
Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structures
Physical Review B, 1985
New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface
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Excitonic reflectance of GaAs crystals cleaved in liquid helium
Physical Review B, 1983
Effect of Electric and Magnetic Fields on the Self-Consistent Potential at the Surface of a Degenerate Semiconductor
Physical Review B, 1972