Interpretation of C/V characteristics for heterojunctions and high-low junctions
- 11 October 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (21) , 868-869
- https://doi.org/10.1049/el:19840589
Abstract
Useful information about the interface can be obtained for heterojunctions or high-low junctions by simple inspection of the graphs of C−2 against V. The distance between the intercepts of the two linear portions of the graph on the voltage axis is simply related to the doping densities and the interface charge.Keywords
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