New nonlinear large-signal DC bipolar junction transistor model
- 1 January 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings G Circuits, Devices and Systems
- Vol. 138 (2) , 145-150
- https://doi.org/10.1049/ip-g-2.1991.0027
Abstract
A new DC nonlinear large-signal model for the bipolar junction transistor is described, together with the procedures for estimating its parameters. The main advantage of the new model over existing models is its very simple parameter estimation procedures. This produces high accuracy with very minor parameter optimisation effort. A further important feature of the model is that it is expandable so that its complexity can be altered to suit the required application.Keywords
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