Anomalous Impurity Diffusion in III–V Compounds: The Consequence of Self-Induced Field Effects
- 16 August 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 72 (2) , 575-584
- https://doi.org/10.1002/pssa.2210720219
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Carrier Density Profiles in Zn- and Cd-Diffused InPJapanese Journal of Applied Physics, 1981
- Formation of p+-p−-n− junctions in InP by Cd diffusionApplied Physics Letters, 1980
- Diffusion of Cd acceptors in InP and a diffusion theory for III-V semiconductorsApplied Physics Letters, 1979
- Diffusion Properties of Cadmium in Indium AntimonideJournal of the Electrochemical Society, 1978
- Diffusion and solubility of Zn in GaSbPhysica Status Solidi (a), 1974
- The Chemical and Isoconcentration Diffusion of Zn in AlSbPhysica Status Solidi (b), 1969
- Dependence of the Diffusion Coefficient on the Fermi Level: Zinc in Gallium ArsenidePhysical Review B, 1967
- Diffusion and solubility of zinc in indium phosphideSolid-State Electronics, 1964
- Diffusion Mechanism of Zn in GaAs and GaP Based on Isoconcentration Diffusion ExperimentsJournal of Applied Physics, 1964
- Diffusion and Solubility of Zinc in Gallium Phosphide Single CrystalsJournal of Applied Physics, 1964