Grain growth of evaporated Te films on a heated and cooled substrate
- 1 April 1975
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (4) , 1473-1477
- https://doi.org/10.1063/1.321786
Abstract
The effect of the substrate temperatures in a wide range between −150 and 270 °C on the grain size, crystal orientation, Hall mobility, and the carrier concentration of evaporated Te films has been investigated. The grain size and the corresponding Hall mobility were observed to increase remarkably with increasing substrate temperature above 50 °C and with decreasing temperature below 50 °C, contrary to the expectation. The carrier concentration decreased with increasing substrate temperature. The influence of Au nucleation centers on the crystallinity and electronic properties were also investigated. An x−ray diffractometer study indicated c−axis texture to occur with improving grain growth.This publication has 6 references indexed in Scilit:
- Effect of Au nucleation centers and deposition rate on crystallinity and electronic properties of evaporated Te films.Journal of Applied Physics, 1975
- Hall Mobility of Evaporated Tellurium FilmsJapanese Journal of Applied Physics, 1973
- Large grain tellurium thin filmsThin Solid Films, 1972
- Structure and growth of oriented tellurium thin filmsThin Solid Films, 1971
- Tellurium TFT's exceed 100-MHz and one-watt capabilitiesProceedings of the IEEE, 1967
- A p-type tellurium thin-film transistorProceedings of the IEEE, 1964