Radiative Recombination and Carrier Lifetimes in Surface-Free GaAs Homostructures
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Growth temperature dependent radiative relaxation in AlGaAs/GaAs multiple quantum wellsApplied Physics Letters, 1989
- Minority-carrier lifetimes in undoped AlGaAs/GaAs multiple quantum wellsApplied Physics Letters, 1989
- Very low interface recombination velocity in (Al,Ga)As heterostructures grown by organometallic vapor-phase epitaxyJournal of Applied Physics, 1988
- Deep level transient spectroscopy study of GaAs surface states treated with inorganic sulfidesApplied Physics Letters, 1988
- Recombination Velocities on GaAs < 100 > Surfaces Immersed in Aqueous SolutionsJournal of the Electrochemical Society, 1988
- Nearly ideal electronic properties of sulfide coated GaAs surfacesApplied Physics Letters, 1987
- Survey of defect-mediated recombination lifetimes in GaAs epilayers grown by different methodsApplied Physics Letters, 1987
- Effects of prelayers on minority-carrier lifetime in GaAs/AlGaAs double heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1984
- Reduction of GaAs surface recombination velocity by chemical treatmentApplied Physics Letters, 1980
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964