XFCB: a high speed complementary bipolar process on bonded SOI
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Silicon-on-Insulator TechnologyPublished by Springer Nature ,1991
- U-groove isolation technique for high speed bipolar VLSI'sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- A new complementary transistor structure for analog integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980