Crystallization of amorphous Si films formed by chemical vapor deposition
- 1 January 1977
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 14 (1) , 54-56
- https://doi.org/10.1116/1.569304
Abstract
The crystallization process of chemically vapor deposited (CVD) amorphous Si films was studied by using a differential scanning calorimeter. A sharp exothermic peak due to amorphous–polycrystalline transition was obtained in the 665–700 °C range. The crystallization temperature was determined to be 665 °C. Transmission-electron diffraction and transmission-electron microscopic examinations revealed that, when amorphous Si film is heated at a slightly higher temperature than the crystallization temperature, the Si dendrite grains nucleate, and grow in size with heating time.Keywords
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