Technological Advances in the Manufacture of Radiation-Hardened CMOS Integrated Circuits
- 1 January 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 24 (6) , 2047-2050
- https://doi.org/10.1109/tns.1977.4329162
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Growing Interest of Advanced Commercial CMOS Technologies for Space and Medical Applications. Illustration with a New Nano-Power and Radiation-Hardened SRAM in 130nm CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Permanent Radiation Effects in Complementary-Symmetry MOS Integrated CircuitsIEEE Transactions on Nuclear Science, 1969
- A Radiation-Induced Instability in Silicon MOS TransistorsIEEE Transactions on Nuclear Science, 1966