Effect of Back‐Side Oxidation on B and P Diffusion in Si Directly Masked with Si3 N 4 Films

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Abstract
It is found that the diffusion of B and P in the front surface of float zone Si wafers is enhanced by oxidation of the back‐surface of the wafers. The range of diffusion enhancement at 1100°C is found to be much larger than previously reported values; the range increases with oxidation time and the range for B agrees well with that for P. Moreover, the results are consistent with the findings that B and P diffuse only by interstitials and that the range of oxidation‐enhanced diffusion is determined by the diffusion of interstitials.