Muonium dynamics in Si at high temperatures
- 15 June 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (23) , 16004-16007
- https://doi.org/10.1103/physrevb.47.16004
Abstract
We report longitudinal muon-spin-relaxation measurements in intrinsic Si from 350 to 850 K. The data are explained by a two-state model describing alternating charge states of muonium resulting from thermally excited electrons. Within this model, the average muon-electron hyperfine parameter in the neutral state is consistent with muonium at the tetrahedral interstitial site. This indicates that at the highest temperatures measured neutral muonium spends significant time away from the bond center site, the calculated adiabatic potential minimum.Keywords
This publication has 14 references indexed in Scilit:
- Muon Stopping Sites in Semiconductors from Decay-Positron ChannelingMaterials Science Forum, 1992
- Modern Muon Spectroscopic Methods in Semiconductor PhysicsMaterials Science Forum, 1992
- Spin dynamics of the positive muon radicals in the presence of rapid electron spin exchange: frequency shift and relaxationJournal of Physics B: Atomic, Molecular and Optical Physics, 1991
- Proton diffusion in crystalline siliconPhysical Review Letters, 1989
- Hyperfine Structure of Anomalous Muonium in Silicon: Proof of the Bond-Centered ModelPhysical Review Letters, 1988
- Muonium states in semiconductorsReviews of Modern Physics, 1988
- Mu to Mu* transition in electron irradiated siliconHyperfine Interactions, 1986
- Direct measurement of muonium hyperfine frequencies in Si and GePhysical Review B, 1983
- The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaPJournal of the Electrochemical Society, 1975
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954