Quantitation of SEM EBIC and CL signals using Monte Carlo electron‐trajectory simulations
Open Access
- 1 March 1994
- Vol. 16 (2) , 78-86
- https://doi.org/10.1002/sca.4950160203
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- A simulation model for cathodoluminescence in the scanning electron microscopeIEEE Transactions on Electron Devices, 1992
- Twinning and impurity segregation in Cr- and Fe-doped LEC InPJournal of Crystal Growth, 1990
- Monte Carlo simulation of CL and EBIC contrasts for isolated dislocationsScanning, 1990
- Electron-beam-induced dislocations in GaAs and InP single crystalsJournal of Applied Physics, 1989
- ELECTRON AND PHOTON - MATTER INTERACTION : ENERGY DISSIPATION AND INJECTION LEVELLe Journal de Physique Colloques, 1989
- Modeling Electron Beam Interactions in SemiconductorsPublished by Elsevier ,1989
- Determination of the absorption coefficient and the internal luminescence spectrum of GaAs and GaAs1−xPx (x = 0.375, 0.78) from beam voltage dependent measurements of cathodoluminescence spectra in the scanning electron microscopePhysica Status Solidi (a), 1988
- A theoretical study of the determination of the depth of a dislocation by combined use of EBIC and CL techniqueUltramicroscopy, 1986
- Theory of cathodoluminescence contrast from localized defects in semiconductorsJournal of Applied Physics, 1986
- The cathodoluminescence contrast formation of localized non-radiative defects in semiconductorsPhysica Status Solidi (a), 1984