Multipulse laser damage of GaAs surfaces

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Abstract
An in-depth study of the single and multiple-pulse laser (10 ns, 10 Hz, and 1064 nm) damage of (100) single-crystal gallium arsenide surfaces is presented. The surface morphologies resulting from both chemical etching and laser-induced damage are discussed. The damage behavior is determined from the damage probability and accumulation curves. The dependence of damage on accumulated incident energy in multipulse experiments is determined and compared with the behavior of other semiconductor and metal surfaces. Finally, Auger electron spectroscopy is employed to measure the elemental depth composition of GaAs wafers using Ar+ ion sputter etching. This technique is used to study the changes in elemental depth profiles caused by the laser-induced damage.