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First Principles Investigation of Vacancy Oxygen Defects in Si
Home
Publications
First Principles Investigation of Vacancy Oxygen Defects in Si
First Principles Investigation of Vacancy Oxygen Defects in Si
C.P. Ewels
C.P. Ewels
RJ
R. Jones
R. Jones
SÖ
Sven Öberg
Sven Öberg
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1 November 1995
journal article
Published by
Trans Tech Publications, Ltd.
in
Materials Science Forum
Vol. 196-201
,
1297-1302
https://doi.org/10.4028/www.scientific.net/msf.196-201.1297
Abstract
No abstract available
Cited
Cited by 26 articles
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