Effect of diffusion and drift on generation–recombination in HgCdTe photoconductors

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Abstract
We present calculations and measurements of the bias field dependence of generation– recombination (g–r) noise and D* in x∠0.2 HgCdTe photoconductors. The field dependence of the noise and D* depend on whether the detector noise is background or thermal dominated. For the background dominated case, the noise voltage increases linearly with field at low field and saturates at high field. D* initially increases with bias field and saturates at high field. For the thermal dominated case, the noise voltage initially increases linearly with bias field at low field and continues to increase like the square root of the field at large fields. D* decreases with increasing field in the thermal dominated case. Comparison is made between the theoretical and experimental results and good agreement is found.

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