Improved thermal performance of AlGaAs/GaAs HBTs by transferring the epitaxial layers to high-thermal-conductivity substrates
- 14 October 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (21) , 1890-1891
- https://doi.org/10.1049/el:19931258
Abstract
The Letter reports the improved thermal performance of AlGaAs/ GaAs heterojunction bipolar transistors (HBTs) by removal of the GaAs substrate and transferring the epitaxial layers to optimal substrates (TELOS). The thermal resistance of HBTs has been halved by transfer to diamond substrates. 3 inch-diameter (76.2mm) epitaxial layers have been transferred, retaining a surface flatness suitable for high resolution photolithography.Keywords
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