Numerical solutions for a one-dimensional silicon n-p-n transistor
- 1 August 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 17 (8) , 594-602
- https://doi.org/10.1109/T-ED.1970.17036
Abstract
This paper describes a technique of obtaining numerical solutions of the basic carrier transport equations for a semiconductor and the results of some calculations pertaining to a silicon n-p-n transistor. The calculations include dc characteristics in direct and inverse operation, saturation parameters, and small-signal ac common emitterh-parameters. Both Boltzmann and Fermi statistics have been used, and the dependence of carrier mobilities on electric field has been taken into account.Keywords
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