Acoustic deformation potentials inAIBIIIC2VIchalcopyrite semiconductors

Abstract
From the analysis of the variation of the energy gap with temperature and pressure in some AIBIIIC2VI chalcopyrite compounds, valence- and conduction-band acoustic deformation potentials are calculated. It is found that both the valence- and conduction-band extrema move to higher energies on compression in these compounds. This should explain the small band-gap pressure and temperature coefficients observed in AIBIII C2VI chalcopyrite compounds relative to their binary analogs.