Gallium nitride nanowires doped with silicon
- 12 November 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (20) , 4241-4243
- https://doi.org/10.1063/1.1628820
Abstract
High-quality GaN nanowires doped with silicon have been synthesized by hot-filament chemical vapor deposition on Au-coated Si (100) wafers. The GaN was systematically characterized by scanning electron microscopy, transmission electron microscopy, x-ray diffraction, Raman spectroscopy, and photoluminescence (PL). The GaN nanowires had a uniform concentration of 3% Si, a uniform diameter around 10 nm, and a hexagonal wurtzite structure grown along the [001] direction. The intense PL peak of GaN nanowires at 344 nm showed a distinct blueshift from the bulk bandgap emission, revealing a clear quantum confinement effect. The growth of GaN nanowires is discussed in terms of the oxide-assisted metal-catalyst vapor–liquid–solid model.Keywords
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