Critical thickness during two-dimensional and three-dimensional epitaxial growth in semiconductor heterostructures
- 15 May 1991
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 8 (2) , 107-124
- https://doi.org/10.1016/0921-5107(91)90024-p
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Criterion for blocking threading dislocations by strained buffer layers in GaAs grown on Si substratesApplied Physics Letters, 1989
- Descriptions of low energy misfit dislocation structures using the parabolic interaction potentialMaterials Science and Engineering: A, 1989
- Damage of coherent multilayer structures by injection of dislocations or cracksJournal of Applied Physics, 1986
- Low energy dislocation structures in epitaxyMaterials Science and Engineering, 1986
- Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]Applied Physics Letters, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Characteristics of Ion‐Implantation Damage and Annealing Phenomena in SemiconductorsJournal of the Electrochemical Society, 1984
- Nucleation and growth of thin filmsReports on Progress in Physics, 1984
- Complete and incomplete wetting of krypton and oxygen on graphite: Reentrant type-2 growth on a scale of substrate strengthPhysical Review B, 1984
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975