Galvanomagnetic Effects inp-Type Silicon

Measurements have been made on several samples of $p$-type silicon of the dependences of electrical resistivity and Hall effect on temperature and magnetic field strength. The electrical resistivity follows a $T^{2.7}$ law in the lattice scattering range in the absence of a magnetic field. The Hall coefficient exhibits a small linear negative temperature dependence between about 200°K and 320°K and is almost entirely independent of field strength up to 13 000 gauss at any temperature between 77°K and 320°K. The dependence of the magnetoresistance on the relative directions of current, field, and crystallographic axes has been studied at 77°K and 300°K as a function of the field strength with particular emphasis on obtaining accurate values of the various coefficients which are required for a complete characterization of the magnetoresistance in the limit of zero field. The main features of these results are the relatively large observed values of longitudinal magnetoresistance, which in some cases are nearly as large as the transverse effects. The results of the galvanomagnetic measurements are somewhat inconsistent with the usual valence band model as deduced from cyclotron resonance experiments at 4°K.