Simultaneous Integration of SiGe High Speed Transistors and High Voltage Transistors

1 October 2006

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE) in 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Abstract

Integration of high voltage transistors and varactors with high tuning range into high frequency SiGe bipolar technologies is challenging due to the requirement of a shallow collector for the high speed transistor. This paper presents a high speed SiGe bipolar technology using a novel concept with two epitaxial layers for the simultaneous integration of high speed transistors, high voltage transistors, and varactors. Using this concept high speed transistors with 209 GHz cut-off frequency and 3.3 ps gate delay have been combined with high voltage transistors providing an emitter-collector breakdown voltage of 5 V. Additionally in this concept a varactor has been developed and optimized to achieve a high tuning range of 13 GHz and low phase noise for a 77 GHz VCO

Keywords

This publication has 1 reference indexed in Scilit:

Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHz
IEEE Journal of Solid-State Circuits, 2004